High density plasma chemical vapor deposition process

• Main Authors: Park, Young-Kyou, Won, Jai-Hyung
• Format: Patent
• Language: English
• Published: 26.08.2004

High-density plasma CVD processes with improved gap filling characteristics are provided. In one exemplary process, the process includes loading a semiconductor substrate into a process chamber. First main process gases, including a silicon source gas, an oxygen gas, a nitrogen free chemical etching...