CdTe-base compound semiconductor single crystal for electro-optic element

In case of chlorine doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is set to chlorine concentration ranging from 0.1 ppmwt to 5.0 ppmwt and has no precipitation having diameter of 2 m or above. In case of chlorine doping, an indium dop...

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Main Authors Hirano, Ryuichi, Taniguchi, Hideyuki
Format Patent
LanguageEnglish
Published 12.08.2004
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Abstract In case of chlorine doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is set to chlorine concentration ranging from 0.1 ppmwt to 5.0 ppmwt and has no precipitation having diameter of 2 m or above. In case of chlorine doping, an indium doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is obtained from a CdTe material melt, to which indium is doped at concentration ranging from 0.01 ppmwt to 1.0 ppmwt, according to a liquid phase epitaxial growth method and has a solidification ratio of 0.9 or below.
AbstractList In case of chlorine doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is set to chlorine concentration ranging from 0.1 ppmwt to 5.0 ppmwt and has no precipitation having diameter of 2 m or above. In case of chlorine doping, an indium doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is obtained from a CdTe material melt, to which indium is doped at concentration ranging from 0.01 ppmwt to 1.0 ppmwt, according to a liquid phase epitaxial growth method and has a solidification ratio of 0.9 or below.
Author Hirano, Ryuichi
Taniguchi, Hideyuki
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Snippet In case of chlorine doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is set to chlorine...
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