Epitaxially coated semiconductor wafer and process for producing it
A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface, wherein the surface of the epitaxial layer has a maximum density of 0.14 localized light scatterers per cm 2 with a cross section of greater than or equal t...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
17.06.2004
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Online Access | Get full text |
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