Epitaxially coated semiconductor wafer and process for producing it

A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface, wherein the surface of the epitaxial layer has a maximum density of 0.14 localized light scatterers per cm 2 with a cross section of greater than or equal t...

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Bibliographic Details
Main Authors Storck, Peter, Siebert, Wolfgang
Format Patent
LanguageEnglish
Published 17.06.2004
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