Method to GaAs based lasers and a GaAs based laser

• Main Authors: Blixt, N, Lindstrom, L. Karsten, Soderholm, Svante, Krummenacher, Lauerent, Silvenius, Christofer, Srinivasan, Anand, Carlstrom, Carl-Fredrik
• Format: Patent
• Language: English
• Published: 13.02.2003

The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride layers on arbitrary structures on GaAs based lasers, and a GaAs based laser manufactured in accordance with...