Process for forming shallow isolating regions in an integrated circuit and an integrated circuit thus formed

The formation of the isolating region includes ion implantation in the voluminal part, followed by annealing of said implanted voluminal part ( 7 ) of the substrate ( 1 ).

Saved in:
Bibliographic Details
Main Authors Lunenborg, Meindert, De Coster, Walter, Inard, Alain, Arnaud, Franck
Format Patent
LanguageEnglish
Published 25.04.2002
Online AccessGet full text

Cover

More Information
Summary:The formation of the isolating region includes ion implantation in the voluminal part, followed by annealing of said implanted voluminal part ( 7 ) of the substrate ( 1 ).