Semiconductor device and method of manufacturing the same

An amorphous semiconductor film comprising silicon is provided with a metal element which is capable of promoting a crystallization of silicon. Then, the semiconductor film is crystallized by hating at a relatively low temperature. After introducing impurity ions into source and drain regions of the...

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Main Authors Takemura, Yasuhiko, Hiroki, Masamitsu, Yamamoto, Mutsuo, Yamaguchi, Naoaki, Teramoto, Satoshi
Format Patent
LanguageEnglish
Published 06.09.2001
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Abstract An amorphous semiconductor film comprising silicon is provided with a metal element which is capable of promoting a crystallization of silicon. Then, the semiconductor film is crystallized by hating at a relatively low temperature. After introducing impurity ions into source and drain regions of the semiconductor film, the source and drain regions are recrystallized by heating. During the recrystallization, the channel region having crystallinity functions as crystalline nuclei. Accordingly, it is possible to avoid defects occurring in the boundary regions between the channel region and source/drain regions.
AbstractList An amorphous semiconductor film comprising silicon is provided with a metal element which is capable of promoting a crystallization of silicon. Then, the semiconductor film is crystallized by hating at a relatively low temperature. After introducing impurity ions into source and drain regions of the semiconductor film, the source and drain regions are recrystallized by heating. During the recrystallization, the channel region having crystallinity functions as crystalline nuclei. Accordingly, it is possible to avoid defects occurring in the boundary regions between the channel region and source/drain regions.
Author Teramoto, Satoshi
Takemura, Yasuhiko
Yamaguchi, Naoaki
Hiroki, Masamitsu
Yamamoto, Mutsuo
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  givenname: Satoshi
  surname: Teramoto
  fullname: Teramoto, Satoshi
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