Resist pattern and method of forming same, method of forming thin-film pattern, and method of manufacturing micro device

A resist pattern includes: an upper layer pattern made of a resist; and a lower layer pattern made of a material being soluble in a developer used for forming the upper layer pattern. The upper layer pattern extends over a portion corresponding to a thin-film pattern to be formed and other portions...

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Main Author Kamijima, Akifumi
Format Patent
LanguageEnglish
Published 02.08.2001
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Abstract A resist pattern includes: an upper layer pattern made of a resist; and a lower layer pattern made of a material being soluble in a developer used for forming the upper layer pattern. The upper layer pattern extends over a portion corresponding to a thin-film pattern to be formed and other portions while the lower layer pattern is formed only in the other portions. The lower layer pattern may be made of polymethylglutarimide with or without a dye. The thin-film pattern is formed through any of an etching method, a liftoff method, and a method utilizing both etching and liftoff methods.
AbstractList A resist pattern includes: an upper layer pattern made of a resist; and a lower layer pattern made of a material being soluble in a developer used for forming the upper layer pattern. The upper layer pattern extends over a portion corresponding to a thin-film pattern to be formed and other portions while the lower layer pattern is formed only in the other portions. The lower layer pattern may be made of polymethylglutarimide with or without a dye. The thin-film pattern is formed through any of an etching method, a liftoff method, and a method utilizing both etching and liftoff methods.
Author Kamijima, Akifumi
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Snippet A resist pattern includes: an upper layer pattern made of a resist; and a lower layer pattern made of a material being soluble in a developer used for forming...
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Title Resist pattern and method of forming same, method of forming thin-film pattern, and method of manufacturing micro device
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