RESIST COMPOSITION AND PATTERN FORMING PROCESS

A resist composition comprising, in a resist, an additive which has a melting point of 160° C. or above, contains no aromatic ring, has a molecular size of no greater than 50 and is soluble in the developing solution for the resist, at 1-50 parts by weight with respect to 100 parts by solid weight o...

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Main Authors KOZAWA, MIWA, WATANABE, KEIJI, YANO, EI, NAMIKI, TAKAHISA, NOZAKI, KOJI, KON, JUNICHI, HOSHINO, EIICHI, URAGUCHI, MASAHIRO, MINAGAWA, TOSHIKATSU, YAMAMOTO, YUICHI
Format Patent
LanguageEnglish
Published 05.07.2001
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Summary:A resist composition comprising, in a resist, an additive which has a melting point of 160° C. or above, contains no aromatic ring, has a molecular size of no greater than 50 and is soluble in the developing solution for the resist, at 1-50 parts by weight with respect to 100 parts by solid weight of the resist, as well as a pattern forming process employing it. It thereby becomes possible to obtain high-resolution resist patterns.