Gate induced charge transfer and hysteresis enlargement in MoS/GeSe vertical heterostructures

Two-dimensional van der Waals heterostructures provide an amazing platform to study the fundamental physical properties and build optoelectronic devices because of their abundant band structures and clean interface. In this paper, a MoS 2 /GeSe 2 vertical heterostructure is built with type I band al...

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Bibliographic Details
Published inJournal of materials chemistry. C, Materials for optical and electronic devices Vol. 9; no. 26; pp. 8213 - 8219
Main Authors Yao, Jiadong, Guo, Wenxuan, Liu, Yali, Niu, Xinyue, Li, Mengge, Wu, Xiaoxiang, Yu, Ying, Ou, Tianjian, Sha, Jian, Wang, Yewu
Format Journal Article
Published 08.07.2021
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