Thermal stability of Mg3Sb1.475Bi0.475Te0.05 high performance n-type thermoelectric investigated through powder X-ray diffraction and pair distribution function analysisElectronic supplementary information (ESI) available. See DOI: 10.1039/c8ta06544f

Cheap and non-toxic n-type Mg 3 Sb 2 based materials exhibit outstanding thermoelectric properties, but for actual applications it is essential to scrutinize their behavior under high temperature conditions. Here, powder samples of nominal composition Mg 3 Sb 1.475 Bi 0.475 Te 0.05 have been subject...

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Bibliographic Details
Main Authors Jørgensen, Lasse Rabøl, Zhang, Jiawei, Zeuthen, Christian Bonar, Iversen, Bo Brummerstedt
Format Journal Article
Published 11.09.2018
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Summary:Cheap and non-toxic n-type Mg 3 Sb 2 based materials exhibit outstanding thermoelectric properties, but for actual applications it is essential to scrutinize their behavior under high temperature conditions. Here, powder samples of nominal composition Mg 3 Sb 1.475 Bi 0.475 Te 0.05 have been subjected to repeated thermal cycling in the temperature range of 300-725 K, while measuring separate synchrotron powder X-ray diffraction and X-ray total scattering data. Approximately 11 wt% elemental bismuth crystallizes as a secondary phase after the first thermal cycle, but the evolution stagnates at approximately 15 wt% after the 10 th thermal cycle. A significant decrease is found in the unit cell parameter of the Mg 3 Sb 1.475 Bi 0.475 Te 0.05 phase after the first thermal cycle, indicating that bismuth release from the crystal structure. This is corroborated by the total scattering data, which do not detect an initial amorphous bismuth phase. In addition, STEM-EDS reveal a homogeneous distribution of antimony and bismuth in the as-synthesized particles, while a clear growth of pure bismuth is observed in a sample having been annealed at 725 K for one hour. The thermal stability of the high performance n-type Te-doped Mg 3 Sb 1.5 Bi 0.5 system is investigated.
Bibliography:10.1039/c8ta06544f
Electronic supplementary information (ESI) available. See DOI
ISSN:2050-7488
2050-7496
DOI:10.1039/c8ta06544f