Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emittersElectronic supplementary information (ESI) available: Details of the SEM images of the AlGaN nanowires grown with different TMg values, RT PL and Raman spectra of the AlGaN nanowires grown with different TMg values, OCP measurements for all the samples, Mott-Schottky analysis of p-type Si, Mott-Schottky fitting data with the equations solved using cylindrical coordinates, FIB sample preparation, STEM images
p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conducti...
Saved in:
Main Authors | , , , , , , , , , , |
---|---|
Format | Journal Article |
Published |
30.08.2018
|
Online Access | Get full text |
Cover
Loading…
Abstract | p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity, while Mott-Schottky experiments measured a hole concentration of 1.3 × 10
19
cm
−3
. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and an optimized p-type AlGaN contact layer for UV-transparency. The ∼335 nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate the electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.
Photoelectrochemical methods are implemented to quantify the hole concentration in AlGaN nanowires, calibrate doping conditions, and design ultraviolet light-emitting diodes. |
---|---|
AbstractList | p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity, while Mott-Schottky experiments measured a hole concentration of 1.3 × 10
19
cm
−3
. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and an optimized p-type AlGaN contact layer for UV-transparency. The ∼335 nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate the electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.
Photoelectrochemical methods are implemented to quantify the hole concentration in AlGaN nanowires, calibrate doping conditions, and design ultraviolet light-emitting diodes. |
Author | Ng, Tien Khee Wei, Nini Alhamoud, Abdullah A Ebaid, Mohamed Priante, Davide Janjua, Bilal Shakfa, Mohammad Khaled Ooi, Boon S Zhang, Daliang Zhao, Chao Zhang, Huafan |
AuthorAffiliation | King Abdullah University of Science and Technology (KAUST) Imaging and Characterization Core Lab Photonics Laboratory |
AuthorAffiliation_xml | – name: Photonics Laboratory – name: Imaging and Characterization Core Lab – name: King Abdullah University of Science and Technology (KAUST) |
Author_xml | – sequence: 1 givenname: Chao surname: Zhao fullname: Zhao, Chao – sequence: 2 givenname: Mohamed surname: Ebaid fullname: Ebaid, Mohamed – sequence: 3 givenname: Huafan surname: Zhang fullname: Zhang, Huafan – sequence: 4 givenname: Davide surname: Priante fullname: Priante, Davide – sequence: 5 givenname: Bilal surname: Janjua fullname: Janjua, Bilal – sequence: 6 givenname: Daliang surname: Zhang fullname: Zhang, Daliang – sequence: 7 givenname: Nini surname: Wei fullname: Wei, Nini – sequence: 8 givenname: Abdullah A surname: Alhamoud fullname: Alhamoud, Abdullah A – sequence: 9 givenname: Mohammad Khaled surname: Shakfa fullname: Shakfa, Mohammad Khaled – sequence: 10 givenname: Tien Khee surname: Ng fullname: Ng, Tien Khee – sequence: 11 givenname: Boon S surname: Ooi fullname: Ooi, Boon S |
BookMark | eNqdUsFu00AQNahItMCFO9IcQarBiUug3EpJoRKB0uReDeuxPbDeXWbXifzffAATpwpSL0icZrT79r03b_YoO3DeUZY9nRQvJ0V5-sq8dVJMZ5PXzf3scFqcFHlZvpke7PvZycPsKMYfRTE7LWfl4b3f33p0iWumClpvCYx3hlwSTOwdsIMz-xG_gEPnNywUofYCLTdtHki071Dx0Ft9sWYlSEAdp0QS55ZMEu_YQOxDsNQpL8qgpOO7UeD5fHn5AnCNbPG7pXfwgZL2EXwNqSVYzhfAHTa0P7nrpxG_cbDh1ELFdU2iKrBaNLBG21M8husVXH0GdBVco7qFGLa-8L_5vp5fQUcYexkn2iWC1o5sETudVFELn1K-NK2Wn4Oqox0ij0OEPA1BJ-O7oFpzY9dAhQl3BraM9Ksfo4oQvV3rmvq4BZnBsquEDVrdmZeKHaat8MXl-1sXEIQC7jZ5DMvVPsrH2YMabaQnt_VR9uxivjr_lEs0N0EUJMPN369U_uv-D7_J2_Q |
ContentType | Journal Article |
DOI | 10.1039/c8nr02615g |
DatabaseTitleList | |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 2040-3372 |
EndPage | 15988 |
ExternalDocumentID | c8nr02615g |
GroupedDBID | -JG 0-7 705 7~J AAEMU ABGFH ACLDK ADSRN AEFDR AFVBQ AGSTE AUDPV BSQNT C6K EE0 EF- H~N J3I RCNCU RPMJG RRC RSCEA SMJ |
ID | FETCH-rsc_primary_c8nr02615g3 |
ISSN | 2040-3364 |
IngestDate | Mon Jan 28 16:42:00 EST 2019 |
IsPeerReviewed | false |
IsScholarly | true |
Issue | 34 |
LinkModel | OpenURL |
MergedId | FETCHMERGED-rsc_primary_c8nr02615g3 |
Notes | T Electronic supplementary information (ESI) available: Details of the SEM images of the AlGaN nanowires grown with different values, OCP measurements for all the samples, Mott-Schottky analysis of p-type Si, Mott-Schottky fitting data with the equations solved using cylindrical coordinates, FIB sample preparation, STEM images of the nanowires, NEXTNANO simulation, and Raman spectra of the UV LEDs under different biases. See DOI Mg values, RT PL and Raman spectra of the AlGaN nanowires grown with different 10.1039/c8nr02615g |
PageCount | 9 |
ParticipantIDs | rsc_primary_c8nr02615g |
ProviderPackageCode | J3I ACLDK RRC 7~J AEFDR RPMJG -JG AGSTE RCNCU AUDPV EF- BSQNT EE0 SMJ RSCEA AFVBQ ADSRN C6K H~N 0-7 ABGFH 705 AAEMU |
PublicationCentury | 2000 |
PublicationDate | 20180830 |
PublicationDateYYYYMMDD | 2018-08-30 |
PublicationDate_xml | – month: 8 year: 2018 text: 20180830 day: 30 |
PublicationDecade | 2010 |
PublicationYear | 2018 |
References_xml | – issn: 2016 publication-title: Springer Series in Materials Science doi: Kneissl Rass – issn: 2015 publication-title: "High efficiency AlGaN deep ultraviolet light emitting diodes on silicon", presented at Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII doi: Mi Zhao Connie Tavakoli Dastjerdi |
SSID | ssj0069363 |
Score | 4.6000094 |
Snippet | p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the... |
SourceID | rsc |
SourceType | Publisher |
StartPage | 1598 |
Title | Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emittersElectronic supplementary information (ESI) available: Details of the SEM images of the AlGaN nanowires grown with different TMg values, RT PL and Raman spectra of the AlGaN nanowires grown with different TMg values, OCP measurements for all the samples, Mott-Schottky analysis of p-type Si, Mott-Schottky fitting data with the equations solved using cylindrical coordinates, FIB sample preparation, STEM images |
Volume | 1 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpZ1Lc9MwEMdFm17gwPDq8CqzBw4wjksSO35wa0toCk0JTRh668ixHTw0dkntzsAX5gvwAdiVZFtJwwyUSyZREkVj7S9arXf_Yuy5HdgTL7J90_FC17QDJzYDJ4zMid_xuO90Y1uI6QyOnP4n-91J92Rt_aeWtVTkwfbkx8q6kuvMKrbhvFKV7D_MbNUpNuBznF98xBnGx7-a448FF7k-6DTSMbeUQi6TLcsMxp2zfX5kpDzNSJJYSC8YJFBsnmv1AsUZfkPcoM-NaJYIvc1efTrOBZ37KXPM51QkWJU7knPaGx1QXIFf8uSMirAowPBGZKVelNkHo97ASGZ8GlUty6OaUihARoTL81pyYzyYGqRELv_GjsfG8FAWU3K66yAKROf8P3r8sDc0ZnWAVF4buk9P_V1wEk2Wgfgsz03SKs3zr6RVVWu4nJsifj1Krn4sTmQ6OeXfqlA35c58K1TiIZrFJU5aIUuev6OrH5ZSLRkSm9IGQGwrDnbVWEjMQcq0yzSJ0bi6rFrsP1MZFFm1UQp4Io-Nzr7wmSpk0-8T9Ase138QQzTaVB6YKIodIj0o1PZElLtVrx0dShS1LCkQvx3pbe7i4qcxrqLKciVDN9fTvCJ66a1cclsWKdZOvHRO2_nutHYsqnTP-s11ttHBFcFrsI2d97v7n0unyfEtcehhNe5SSdjyX9XfRv9vXp7LI_y_8R12W23cYEdSeJetRek9dkuT87x_41fNIxCPsMAjJCkIO4XKTgFtDpZ5BI1HuMojLPAIGo_wAml8CRWLr0GRCFkMaH-AJII0mbJleTyCGyCDhYobQG5ActOE4zEMDwE5BMEhKA6v3R9SCDqF4ooghaI3RWETFuCCkkH6UckgjJLlDykCgQiUA6AeKwJBEgiCQNAIBI3AJiB_ahSg8dcEok9dygds621vvNc30WZOz6V2z2ltTNYma6RZGj1k4LtewF2vG7uhZYcxD6I4cNtBK_TdwGvb4SO2ubqPx3964wm7WWP5lDXyeRFt4e4lD54py_8NcV9nJg |
link.rule.ids | 315,783,787,27938,27939 |
linkProvider | Royal Society of Chemistry |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Quantified+hole+concentration+in+AlGaN+nanowires+for+high-performance+ultraviolet+emittersElectronic+supplementary+information+%28ESI%29+available%3A+Details+of+the+SEM+images+of+the+AlGaN+nanowires+grown+with+different+TMg+values%2C+RT+PL+and+Raman+spectra+of+the+AlGaN+nanowires+grown+with+different+TMg+values%2C+OCP+measurements+for+all+the+samples%2C+Mott-Schottky+analysis+of+p-type+Si%2C+Mott-Schottky+fitting+data+with+the+equations+solved+using+cylindrical+coordinates%2C+FIB+sample+preparation%2C+STEM+images&rft.au=Zhao%2C+Chao&rft.au=Ebaid%2C+Mohamed&rft.au=Zhang%2C+Huafan&rft.au=Priante%2C+Davide&rft.date=2018-08-30&rft.issn=2040-3364&rft.eissn=2040-3372&rft.volume=1&rft.issue=34&rft.spage=1598&rft.epage=15988&rft_id=info:doi/10.1039%2Fc8nr02615g&rft.externalDocID=c8nr02615g |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2040-3364&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2040-3364&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2040-3364&client=summon |