Doping marker layers for ex situ growth characterisation of HVPE gallium nitrideElectronic supplementary information (ESI) available. See DOI: 10.1039/c6ce02474b

With this work we investigate several different ways to create marker layers for the ex situ characterisation of hydride vapour phase epitaxial (HVPE) gallium nitride (GaN) growth. Significant variations of the charge carrier concentration of GaN crystals become visible as marker lines in cross sect...

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Bibliographic Details
Main Authors Hofmann, Patrick, Leibiger, Gunnar, Krupinski, Martin, Habel, Frank, Mikolajick, Thomas
Format Journal Article
LanguageEnglish
Published 30.01.2017
Online AccessGet full text

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