Structures and ionization energies of small lithium doped germanium clustersElectronic supplementary information (ESI) available. See DOI: 10.1039/c3cp44395g
We present a combined theoretical and experimental investigation of neutral and cationic lithium doped germanium clusters, Ge n Li m ( n = 5-10; m = 1-4). The vertical ionization energies and ionization thresholds are derived from threshold photoionization efficiency curves in the 4.68-6.24 eV range...
Saved in:
Main Authors | , , , , , , |
---|---|
Format | Journal Article |
Language | English |
Published |
13.03.2013
|
Online Access | Get full text |
Cover
Loading…
Summary: | We present a combined theoretical and experimental investigation of neutral and cationic lithium doped germanium clusters, Ge
n
Li
m
(
n
= 5-10;
m
= 1-4). The vertical ionization energies and ionization thresholds are derived from threshold photoionization efficiency curves in the 4.68-6.24 eV range and are compared with calculated vertical and adiabatic ionization energies for the lowest energy isomers obtained using DFT computations. The agreement between experimental and computed values supports the identification of the ground state structures. Charge population analysis shows that lithium transfers its valence electron to the Ge
n
hosts to form Ge
n
mδ
−
-
m
Li
δ
+
and Ge
n
(
mδ
−
+1)
-
m
Li
δ
+
complexes. This is also illustrated by the strong correlation between the size dependent lithium adsorption energies in Ge
n
Li and the Ge
n
electron affinities. Neutral Ge
n
Li
m
clusters are formed by adsorbing lithium atoms on either triangular or rhombic faces of the Ge
n
framework with the lithium atoms tending to avoid each other. The chemical bonding phenomena of clusters are analyzed in detail using the densities of states and molecular orbitals.
Measured photoionization efficiency curves support the identification of the ground state structures of lithium doped germanium clusters, Ge
n
Li
m
(
n
= 5-10;
m
= 1-4). |
---|---|
Bibliography: | 10.1039/c3cp44395g Electronic supplementary information (ESI) available. See DOI |
ISSN: | 1463-9076 1463-9084 |
DOI: | 10.1039/c3cp44395g |