Van der Waals MoS 2 /VO 2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

• Published in: Scientific reports Vol. 7; no. 1; p. 14250
• Main Authors: Oliva, Nicoló, Casu, Emanuele Andrea, Yan, Chen, Krammer, Anna, Rosca, Teodor, Magrez, Arnaud, Stolichnov, Igor, Schueler, Andreas, Martin, Olivier J F, Ionescu, Adrian Mihai
• Format: Journal Article
• Language: English
• Published: England 27.10.2017

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS ) on a phase transition material, vanadium dioxide (VO ). The vdW MoS /VO heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO . We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.