The Effects of Annealing Temperatures on Composition and Strain in Si x Ge 1- x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

• Published in: Materials Vol. 7; no. 2; p. 1409
• Main Authors: Abidin, Mastura Shafinaz Zainal, Morshed, Tahsin, Chikita, Hironori, Kinoshita, Yuki, Muta, Shunpei, Anisuzzaman, Mohammad, Park, Jong-Hyeok, Matsumura, Ryo, Mahmood, Mohamad Rusop, Sadoh, Taizoh, Hashim, Abdul Manaf
• Format: Journal Article
• Language: English
• Published: Switzerland 24.02.2014
• Subjects: silicon; electrochemical deposition; germanium; rapid melting

The effects of annealing temperatures on composition and strain in Si Ge , obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single...