Self-Consistent Analysis of Strain-Compensated InGaNaAlGaN Quantum Wells for Lasers and Light-Emitting Diodes

• Published in: IEEE journal of quantum electronics Vol. 45; no. 1
• Main Authors: Hongping Zhao, Hongping Zhao, Arif, R A, Yik-Khoon Ee, Yik-Khoon Ee, Tansu, N
• Format: Journal Article
• Language: English
• Published: 01.01.2009
• Subjects: Density; Gain; Indium gallium nitrides; Lasers; Light-emitting diodes; Quantum wells; Spectral emissivity; Spontaneous emission

Strain-compensated InGaN-AlGaN quantum wells (QW) are investigated as improved active regions for lasers and light emitting diodes. The strain-compensated QW structure consists of thin tensile-strained AlGaN barriers surrounding the InGaN QW. The band structure was calculated by using a self-consist...