Optimization of ClusterCarbonTM process parameters for strained Si lattice
We present here the substitutional carbon dependence of ClusterCarbon implant energy and dose, and anneal parameters such as solid phase epitaxial regrowth (SPER) temperature and various high temperature millisecond flash anneal conditions. With a multiple implant sequence of carbon implants one can...
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Published in | Materials science & engineering. B, Solid-state materials for advanced technology Vol. 154-155; pp. 122 - 125 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
05.12.2008
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Online Access | Get full text |
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