SEM Characterization of ZnO Thin Films Deposited by Dip-Coating Technique

In this study, ZnO thin films were deposited on the silicon substrate by using dip-coating method. To prepare zinc solution, zinc acetate dehydrate was used as starting material and dissolved in 2-methoexyethanol. Monoethanolamine was used in this solution as stabilizer. Then, the solution was stirr...

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Published inAIP conference proceedings Vol. 1136; pp. 786 - 789
Main Authors Zakaria, N Z, Amizam, S, Rusop, M
Format Journal Article
LanguageEnglish
Published 21.11.2008
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Abstract In this study, ZnO thin films were deposited on the silicon substrate by using dip-coating method. To prepare zinc solution, zinc acetate dehydrate was used as starting material and dissolved in 2-methoexyethanol. Monoethanolamine was used in this solution as stabilizer. Then, the solution was stirred at 60 deg C for one hour and stayed at room temperature for one night Thin film was obtained by dip coating the solution on silicon substrates at different withdrawal speeds. The effect of different withdrawal speed on the surface morphology of the ZnO thin film was investigated scanning electron microscope (SEM).The SEM image showed that the grain size has decreased as speed increased.
AbstractList In this study, ZnO thin films were deposited on the silicon substrate by using dip-coating method. To prepare zinc solution, zinc acetate dehydrate was used as starting material and dissolved in 2-methoexyethanol. Monoethanolamine was used in this solution as stabilizer. Then, the solution was stirred at 60 deg C for one hour and stayed at room temperature for one night Thin film was obtained by dip coating the solution on silicon substrates at different withdrawal speeds. The effect of different withdrawal speed on the surface morphology of the ZnO thin film was investigated scanning electron microscope (SEM).The SEM image showed that the grain size has decreased as speed increased.
Author Amizam, S
Zakaria, N Z
Rusop, M
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