Electrodeposition of CuInSe(2) from ethylene glycol at 150 'C

• Published in: Solar energy materials and solar cells Vol. 93; no. 9; pp. 1518 - 1523
• Main Authors: Wellings, J S, Samantilleke, A P, Heavens, S N, Warren, P, Dharmadasa, I M
• Format: Journal Article
• Language: English
• Published: 01.09.2009
• DOI: 10.1016/j.solmat.2009.03.031
• ISSN: 0927-0248

Polycrystalline chalcopyrite thin films were potentiostatically electrodeposited from ethylene glycol solution onto SnO(2)-coated glass substrates at 150 'C. The thickness of the layers was estimated using talysurf at 1.0 km after deposition for 60 min. X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analyses were used to identify and characterise compounds formed at different potentials. It was found that Cu(1.75)Se formation was dominant at -0.80 V vs Se and indium assimilation increased at more negative voltages forming a mixture of compounds including numerous Cu-Se binary phases and copper indium diselenide (CuInSe(2)) at the cathode. As-deposited materials showed poor crystallinity and therefore films were annealed in Ar/5%H(2) in the presence of Se to improve the material quality for all investigations. Although the films were deposited at 150 'C, no noticeable improvement of the CuInSe(2) was observed, suggesting growth from aqueous media at room temperature to be preferable.