Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al@@d2@O@@d3@ based devices

• Published in: Microelectronic engineering Vol. 86; no. 7-9; pp. 1921 - 1924
• Main Authors: Lanza, M, Porti, M, Nafria, M, Aymerich, X, Benstetter, G, Lodermeier, E, Ranzinger, H, Jaschke, G, Teichert, S, Wilde, L, Michalowski, P
• Format: Journal Article
• Language: English
• Published: 01.09.2009

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al@@d2@O@@d3@ stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.