Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al@@d2@O@@d3@ based devices

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al@@d2@O@@d3@ stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.

Saved in:
Bibliographic Details
Published inMicroelectronic engineering Vol. 86; no. 7-9; pp. 1921 - 1924
Main Authors Lanza, M, Porti, M, Nafria, M, Aymerich, X, Benstetter, G, Lodermeier, E, Ranzinger, H, Jaschke, G, Teichert, S, Wilde, L, Michalowski, P
Format Journal Article
LanguageEnglish
Published 01.09.2009
Online AccessGet full text

Cover

More Information
Summary:In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al@@d2@O@@d3@ stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-1
ISSN:0167-9317
DOI:10.1016/j.mee.2009.03.020