High-performance MoS2phototransistors with Hf1-xAlxO back-gate dielectric layer grown by plasma enhanced atomic layer deposition

• Published in: Nanotechnology Vol. 35; no. 19
• Main Authors: Yu, Qiu-Jun, Li, Xiao-Xi, Li, Yu-Chun, Ding, Si-Tong, Huang, Teng, Gu, Ze-Yu, Ou, Lang-Xi, Lu, Hong-Liang
• Format: Journal Article
• Language: English
• Published: 22.02.2024

Molybdenum sulfide (MoS2) as an emerging optoelectronic material, shows great potential for phototransistors owing to its atomic thickness, adjustable band gap, and low cost. However, the phototransistors based on MoS2have been shown to have some issues such as large gate leakage current, and interf...