Reliable synaptic plasticity of InGaZnO transistor with TiO2interlayer

• Published in: Nanotechnology Vol. 35; no. 11
• Main Authors: Jeong, Soo-Hong, Oh, Seyoung, Kwon, Ojun, Kim, Do Hyeong, Seo, Hyun Young, Park, Woojin, Cho, Byungjin
• Format: Journal Article
• Language: English
• Published: 29.12.2023

We demonstrate an InGaZnO (IGZO)-based synaptic transistor with a TiO2buffer layer. The structure of the synaptic transistor with TiO2inserted between the Ti metal electrode and an IGZO semiconductor channel O2trapping layer produces a large hysteresis window, which is crucial for achieving synaptic...