A Ka-Band GaAs Monolithic Phase Shifter

The design and performance of a GaAs monolithic 1800 one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitic in the switching FET's. Over the 27.5-30 GHz band, typical...

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Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 83; no. 12; pp. 1077 - 1083
Main Authors Geddes, J J, Contolatis, A, Bauhahn, P E, Chao, Chente
Format Journal Article
LanguageEnglish
Published 01.12.1983
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Summary:The design and performance of a GaAs monolithic 1800 one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitic in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20 deg of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.
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ISSN:0018-9480