Growth of SrTiO sub 3 thin epitaxial films by aerosol MOCVD

SrTiO sub 3 thin films were prepared by aerosol metal-organic chemical vapour deposition on (001) MgO, R-plane Al sub 2 O sub 3 and (001) Si single-crystal substrates. Strontium tetramethyl heptadionate and titanium n-butoxide dissolved in diethyleneglycol dimethyl ether were used as precursors. The...

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Published inThin solid films Vol. 260; no. 2; pp. 187 - 191
Main Authors Frohlich, K, Machajdik, D, Rosova, A, Vavra, I, Weiss, F, Bochu, B, Senateur, J P
Format Journal Article
LanguageEnglish
Published 15.05.1995
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Abstract SrTiO sub 3 thin films were prepared by aerosol metal-organic chemical vapour deposition on (001) MgO, R-plane Al sub 2 O sub 3 and (001) Si single-crystal substrates. Strontium tetramethyl heptadionate and titanium n-butoxide dissolved in diethyleneglycol dimethyl ether were used as precursors. The structure of the films was investigated by x-ray diffraction and transmission electron microscopy. Epitaxial films with [001] and [111] orientation perpendicular to the substrate surface were obtained on MgO and Al sub 2 O sub 3 , respectively. The epitaxial films on the MgO substrate were found to be in a relaxed state with lattice parameters corresponding to the bulk values. SrTiO sub 3 films on the Si substrate were grown as highly textured in the [011] direction and randomly oriented in the plane parrallel to the substrate surface.
AbstractList SrTiO sub 3 thin films were prepared by aerosol metal-organic chemical vapour deposition on (001) MgO, R-plane Al sub 2 O sub 3 and (001) Si single-crystal substrates. Strontium tetramethyl heptadionate and titanium n-butoxide dissolved in diethyleneglycol dimethyl ether were used as precursors. The structure of the films was investigated by x-ray diffraction and transmission electron microscopy. Epitaxial films with [001] and [111] orientation perpendicular to the substrate surface were obtained on MgO and Al sub 2 O sub 3 , respectively. The epitaxial films on the MgO substrate were found to be in a relaxed state with lattice parameters corresponding to the bulk values. SrTiO sub 3 films on the Si substrate were grown as highly textured in the [011] direction and randomly oriented in the plane parrallel to the substrate surface.
Author Machajdik, D
Senateur, J P
Frohlich, K
Weiss, F
Rosova, A
Vavra, I
Bochu, B
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