Current transport in CuInS sub(2):Ga/CdS/ZnO - solar cells

Beneficial effects of Ga on solar cell performance, e.g. open circuit voltage (V sub(oc) > 800 mV) in CuInS sub(2) (CIS) thin film solar cells have been observed. These highly efficient cells were used for fundamental investigations on the recombination mechanism. It could be shown that the incor...

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Bibliographic Details
Published inThin solid films Vol. 361; pp. 458 - 462
Main Authors Hengel, I, Neisser, A, Klenk, R, Lux-Steiner, M Ch
Format Journal Article
LanguageEnglish
Published 01.01.2000
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Summary:Beneficial effects of Ga on solar cell performance, e.g. open circuit voltage (V sub(oc) > 800 mV) in CuInS sub(2) (CIS) thin film solar cells have been observed. These highly efficient cells were used for fundamental investigations on the recombination mechanism. It could be shown that the incorporation of small amounts of Ga does not change the recombination mechanism as such. CIS-based solar cells exhibit a change from tunnelling into interface states in the dark to a thermally activated process under illumination. However, V sub(oc) extrapolates to a value below the bandgap energy (E sub(g)) of the CIS. For the latter process a model is proposed in which dominant recombination occurs at the interface and V sub(oc) is limited due to the non-ideal band alignment in CuInS sub(2)/CdS junctions.
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ISSN:0040-6090