Single superconducting thin film devices for applications in high T sub(c) materials circuits
The authors investigated several different devices based on regions of weak superconductivity and multiple parallel links in thin films. Device switching properties and the dependence of the flux flow signature in the IV curve on applied magnetic field were explored. Both Nb and high T sub(c) thin f...
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Published in | IEEE transactions on magnetics Vol. 25; no. 2; pp. 954 - 956 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
01.01.1989
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Online Access | Get full text |
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Abstract | The authors investigated several different devices based on regions of weak superconductivity and multiple parallel links in thin films. Device switching properties and the dependence of the flux flow signature in the IV curve on applied magnetic field were explored. Both Nb and high T sub(c) thin films were used in circuit fabrication. Contrary to vortex flow devices based on Josephson junctions, those described here do not possess a tunneling barrier and are made of only a single superconducting layer. Hence they should be applicable to electronic circuits based on high T sub(c) superconducting materials without the need for tunnel junctions. |
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AbstractList | The authors investigated several different devices based on regions of weak superconductivity and multiple parallel links in thin films. Device switching properties and the dependence of the flux flow signature in the IV curve on applied magnetic field were explored. Both Nb and high T sub(c) thin films were used in circuit fabrication. Contrary to vortex flow devices based on Josephson junctions, those described here do not possess a tunneling barrier and are made of only a single superconducting layer. Hence they should be applicable to electronic circuits based on high T sub(c) superconducting materials without the need for tunnel junctions. |
Author | Ginley, D S Hohenwarter, G K G Nordman, J E Beyer, J B McGinnis, D P Martens, J S |
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