Enhanced threshold voltage of Zn-doped Ge sub(2)Sb sub(2)Te sub(5) phase-change memory deposited by electron-beam evaporation

• Published in: Physica status solidi. A, Applications and materials science Vol. 210; no. 12; pp. 2650 - 2655
• Main Authors: Li, Rui, Jiang, Yifan, Xu, Ling, Ma, Zhongyuan, Yang, Fei, Xu, Jun, Su, Weining
• Format: Journal Article
• Language: English
• Published: 01.12.2013
• Subjects: Band spectra; Deposition; Devices; Evaporation; Memory devices; Thin films; Threshold voltage; Zinc

Zn-doped Ge sub(2)Sb sub(2)Te sub(5) (GST) thin films are deposited on glass substrates by an electron-beam evaporation technique in an ultra-high vacuum. GST mixed with 5%, 10%, 20% Zn is used. Through in situ resistance measurements, an increase of crystalline temperature in Zn-doped GST was obser...