Analysis of Effective Field Emitting Angle for Spindt Cathode

• Published in: Key engineering materials Vol. 645-646; pp. 1038 - 1042
• Main Authors: Li, Nan Nan, Pang, Shu Cai, Yan, Fei, Jin, Da Zhi, Xiang, Wei, Zhang, De, Dai, Jin Yi, Zeng, Bao Qing
• Format: Journal Article
• Language: English
• Published: 01.05.2015
• Subjects: Apertures; Electric potential; Emission; Emittance; Field emission; Gates; Insulators; Trends; Voltage
• DOI: 10.4028/www.scientific.net/KEM.645646.1038
• ISSN: 1013-9826

Effective field emitting angle plays an important role when investigating field emission characters. In this work, effective field emitting angle is introduced for Spindt-type emitter to relate spatial variation of current density along tip's surface to emission current. The effects of various parameters on effective field emitting angle are analyzed. The results show that effective field emitting angle decreases exponentially as half angle increases, decreases quadratically as radius of gate aperture increases, but increases logarithmically as gate voltage increases linearly. It is also found that effective field emitting angle increases first and then decreases with emitter's height increasing. Similar trends can be also found with insulator height. Grid thickness nearly has no effect on the effective field emitting angle.