Analysis of Effective Field Emitting Angle for Spindt Cathode

Effective field emitting angle plays an important role when investigating field emission characters. In this work, effective field emitting angle is introduced for Spindt-type emitter to relate spatial variation of current density along tip's surface to emission current. The effects of various...

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Published inKey engineering materials Vol. 645-646; pp. 1038 - 1042
Main Authors Li, Nan Nan, Pang, Shu Cai, Yan, Fei, Jin, Da Zhi, Xiang, Wei, Zhang, De, Dai, Jin Yi, Zeng, Bao Qing
Format Journal Article
LanguageEnglish
Published 01.05.2015
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Abstract Effective field emitting angle plays an important role when investigating field emission characters. In this work, effective field emitting angle is introduced for Spindt-type emitter to relate spatial variation of current density along tip's surface to emission current. The effects of various parameters on effective field emitting angle are analyzed. The results show that effective field emitting angle decreases exponentially as half angle increases, decreases quadratically as radius of gate aperture increases, but increases logarithmically as gate voltage increases linearly. It is also found that effective field emitting angle increases first and then decreases with emitter's height increasing. Similar trends can be also found with insulator height. Grid thickness nearly has no effect on the effective field emitting angle.
AbstractList Effective field emitting angle plays an important role when investigating field emission characters. In this work, effective field emitting angle is introduced for Spindt-type emitter to relate spatial variation of current density along tip's surface to emission current. The effects of various parameters on effective field emitting angle are analyzed. The results show that effective field emitting angle decreases exponentially as half angle increases, decreases quadratically as radius of gate aperture increases, but increases logarithmically as gate voltage increases linearly. It is also found that effective field emitting angle increases first and then decreases with emitter's height increasing. Similar trends can be also found with insulator height. Grid thickness nearly has no effect on the effective field emitting angle.
Author Xiang, Wei
Dai, Jin Yi
Li, Nan Nan
Pang, Shu Cai
Yan, Fei
Jin, Da Zhi
Zeng, Bao Qing
Zhang, De
Author_xml – sequence: 1
  givenname: Nan
  surname: Li
  middlename: Nan
  fullname: Li, Nan Nan
– sequence: 2
  givenname: Shu
  surname: Pang
  middlename: Cai
  fullname: Pang, Shu Cai
– sequence: 3
  givenname: Fei
  surname: Yan
  fullname: Yan, Fei
– sequence: 4
  givenname: Da
  surname: Jin
  middlename: Zhi
  fullname: Jin, Da Zhi
– sequence: 5
  givenname: Wei
  surname: Xiang
  fullname: Xiang, Wei
– sequence: 6
  givenname: De
  surname: Zhang
  fullname: Zhang, De
– sequence: 7
  givenname: Jin
  surname: Dai
  middlename: Yi
  fullname: Dai, Jin Yi
– sequence: 8
  givenname: Bao
  surname: Zeng
  middlename: Qing
  fullname: Zeng, Bao Qing
BookMark eNqVyrFOwzAQgGELFYmW8g4eEVJcO46dZGCoqlSVEBPdqyg5l0PuufRcIt4eBl6A6f-GfyFmlAiEeDJaVbpsVtM0KR4QKGPAQRHk1Uv3qnzlfOWV0ba5EXPjfVm0detmv9bGFm1T-juxYP7Q2prGuLl4XlMfvxlZpiC7EGDI-AVyixBH2Z0wZ6SjXNMxggzpIt_OSGOWmz6_pxGW4jb0keHhr_ficdvtN7vifEmfV-B8OCEPEGNPkK58MLWzrvTa1vYf6w8kA0qq
ContentType Journal Article
DBID 7SP
7SR
8BQ
8FD
F28
FR3
JG9
L7M
DOI 10.4028/www.scientific.net/KEM.645646.1038
DatabaseName Electronics & Communications Abstracts
Engineered Materials Abstracts
METADEX
Technology Research Database
ANTE: Abstracts in New Technology & Engineering
Engineering Research Database
Materials Research Database
Advanced Technologies Database with Aerospace
DatabaseTitle Materials Research Database
Engineered Materials Abstracts
Technology Research Database
Electronics & Communications Abstracts
Engineering Research Database
Advanced Technologies Database with Aerospace
ANTE: Abstracts in New Technology & Engineering
METADEX
DatabaseTitleList Materials Research Database
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 1662-9795
EndPage 1042
GroupedDBID -~X
.4S
.DC
4.4
7SP
7SR
8BQ
8FD
8FE
8FG
AAATW
ABJCF
ABJNI
ACGFS
ACIWK
AFKRA
ALMA_UNASSIGNED_HOLDINGS
BENPR
BGLVJ
CCPQU
D1I
DB1
DKFMR
EBS
EJD
F28
F5P
FR3
HCIFZ
JG9
KB.
L6V
L7M
L8X
M7S
P2P
PDBOC
PTHSS
RTP
~02
ID FETCH-proquest_miscellaneous_17535260373
ISSN 1013-9826
IngestDate Fri Jun 28 18:05:18 EDT 2024
IsPeerReviewed true
IsScholarly true
Language English
LinkModel OpenURL
MergedId FETCHMERGED-proquest_miscellaneous_17535260373
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-2
PQID 1753526037
PQPubID 23500
ParticipantIDs proquest_miscellaneous_1753526037
PublicationCentury 2000
PublicationDate 20150501
PublicationDateYYYYMMDD 2015-05-01
PublicationDate_xml – month: 05
  year: 2015
  text: 20150501
  day: 01
PublicationDecade 2010
PublicationTitle Key engineering materials
PublicationYear 2015
SSID ssj0031815
Score 4.1318965
Snippet Effective field emitting angle plays an important role when investigating field emission characters. In this work, effective field emitting angle is introduced...
SourceID proquest
SourceType Aggregation Database
StartPage 1038
SubjectTerms Apertures
Electric potential
Emission
Emittance
Field emission
Gates
Insulators
Trends
Voltage
Title Analysis of Effective Field Emitting Angle for Spindt Cathode
URI https://search.proquest.com/docview/1753526037
Volume 645-646
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LS8NAEF60BdGD-MRnWcGDWNLaNNkmx6qJxT4UTaF4CUk2sQFNRNuLv97Z3by0BauHhjKU3aTzMTs7-eZbhE5l1_OblFCJAh4kBVJ0SQMcSQGk5o4SeIHO65D9AekMlduROsqPt-LdJRO35n3O7Sv5j1fBBn5lXbJ_8Gw2KBjgO_gXruBhuC7k46KiiJAhZjwgk5HSqsZrKCjN7ej5RSh7P74x8j5v-ovpNwpQFyKDnysTViGNFfef8XXCJBSzT_7aKak1j6cwaJgFEFFTNf3MciuECq6d6tM4LNYZGmrO6ktCIzsHQtfkRLha2AiRJb0ljslM4ylRVIkoxajIRNgLKyzsAOV50Ru2sqwjgTFrRTcoI0uxCg0Yu0a_Rpj0DanloxXFswd3tjns9WzLGFnLqCwz4XwmHGDepAszRC9-oEX2ICvoPJm1Pjtn_ceMM2s1T0CsDbSe7BxwW8BgEy350RZaK-hJbqMMEDgOcAYIzAGBU0BgDggMgMACEDgBxA46Mw3rqiOld2BDDGAvdpzIj6cfNlNbVWFj2mw1d1EpiiN_D2FPVj2t4VFNppCVE1dXqdMKLhzVVVwaeNo-Ovl1uIMFfnOIVnO4HKHS5H3qH0OiNnEr_O-voPKlMbh_-AJQbUM9
link.rule.ids 315,786,790,27946,27947,33398,33769
linkProvider ProQuest
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Analysis+of+Effective+Field+Emitting+Angle+for+Spindt+Cathode&rft.jtitle=Key+engineering+materials&rft.au=Li%2C+Nan+Nan&rft.au=Pang%2C+Shu+Cai&rft.au=Yan%2C+Fei&rft.au=Jin%2C+Da+Zhi&rft.date=2015-05-01&rft.issn=1013-9826&rft.eissn=1662-9795&rft.volume=645-646&rft.spage=1038&rft.epage=1042&rft_id=info:doi/10.4028%2Fwww.scientific.net%2FKEM.645646.1038&rft.externalDBID=NO_FULL_TEXT
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1013-9826&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1013-9826&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1013-9826&client=summon