The influence of growth conditions on carrier lifetime in 4HaSiC epilayers

• Published in: Journal of crystal growth Vol. 381; pp. 43 - 50
• Main Authors: Lilja, Louise, Booker, Ian, Hassan, Jawad, Janzen, Erik, Bergman, J
• Format: Journal Article
• Language: English
• Published: 01.10.2013
• Subjects: Carrier lifetime

4HaSiC homoepitaxial layers have been grown in a horizontal hot-wall CVD (chemical vapor deposition) reactor and the measured carrier lifetimes have been correlated to the CVD growth conditions. Two different generations of reactors were compared, resulting in measured carrier lifetimes in two diffe...