Vapor-phase growth and characterization of Mo sub(1-x)W sub(x)S sub(2) (0 less than or equal to x less than or equal to 1) atomic layers on 2-inch sapphire substrates
Atomically thin Mo sub(1-x)W sub(x)S sub(2) (0 less than or equal to x less than or equal to 1) ternary compounds have been grown on 2-inch c-plane sapphire substrates with high uniformity by sulfurizing thin Mo sub(1-x)W sub(x) layers that were deposited at room temperature using a co-sputtering te...
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Published in | Nanoscale Vol. 6; no. 1; pp. 624 - 629 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
01.12.2013
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Subjects | |
Online Access | Get full text |
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Summary: | Atomically thin Mo sub(1-x)W sub(x)S sub(2) (0 less than or equal to x less than or equal to 1) ternary compounds have been grown on 2-inch c-plane sapphire substrates with high uniformity by sulfurizing thin Mo sub(1-x)W sub(x) layers that were deposited at room temperature using a co-sputtering technique. Atomic force microscopy (AFM), Raman scattering, and optical absorbance spectroscopy (OAS) studies reveal that the Mo sub(1-x)W sub(x)S sub(2) films consist of crystallites of two-to-four monolayers in thickness. X-ray photoelectron spectroscopy (XPS) shows that the core levels of Mo3d and W4f shift to lower binding energies while that of S2p shifts to higher ones with the increase in W compositions, which can be related to the larger electron affinity of W (0.8163 eV) than that of Mo (0.7473 eV). OAS has also shown that the direct bandgap of Mo sub(1-x)W sub(x)S sub(2) is tuned from 1.85 to 1.99 eV by increasing x from 0 to 1. Both E super(1) sub(2g) and A sub(1g) phonon modes of the Mo sub(1-x)W sub(x)S sub(2) films exhibit a two-mode behavior. The bandgap tuning and the two-mode phonon behaviors are typically the same as those recently observed in monolayer Mo sub(1-x)W sub(x)S sub(2) obtained by mechanical exfoliation, thus shedding light on the bottom-up growth of large-scale two-dimensional Mo sub(1-x)W sub(x)S sub(2) ternary alloys. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-1 |
ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/c3nr04515c |