Electrical and Optical Characterization of Ni/Al sub(0.3)Ga sub(0.7)N/GaN Schottky Barrier Diodes

• Published in: Journal of electronic materials Vol. 41; no. 11; pp. 3017 - 3020
• Main Authors: Kordos, P, Skriniarova, J, Chvala, A, Florovic, M, Kovac, J, Donoval, D
• Format: Journal Article
• Language: English
• Published: 01.11.2012
• Subjects: Barriers; Diodes; Dislocation density; Gallium nitrides; Mathematical analysis; Nickel; Thermionics; Tunneling

Ni/AlGaN/GaN Schottky barrier diodes were characterized by electrical and optical measurements. Analysis of temperature-dependent (80 K to 550 K) current-voltage characteristics considering various transport mechanisms shows that the tunneling current dominates in the samples investigated. Thermioni...