Topological phonons in an inhomogeneously strained silicon-2: Evidence of spin-momentum locking

In this study, we report first experimental evidence of spin-momentum locking in the topological phonons in an inhomogeneously strained Si thin film. The spin-momentum locking in the topological phonons lead to a longitudinal spin texture or spatially inhomogeneous spin distribution in the freestand...

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Bibliographic Details
Published inarXiv.org
Main Authors Katailiha, Anand, Lou, Paul C, Bhardwaj, Ravindra G, Beyermann, Ward P, Kumar, Sandeep
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 11.10.2021
Subjects
Carrier density
Charge density
Crystallography
Current carriers
Electromagnetism
Hall effect
Locking
Momentum
Phonons
Room temperature
Silicon
Spintronics
Texture
Thermoelectricity
Thin films
Topology
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Summary:In this study, we report first experimental evidence of spin-momentum locking in the topological phonons in an inhomogeneously strained Si thin film. The spin-momentum locking in the topological phonons lead to a longitudinal spin texture or spatially inhomogeneous spin distribution in the freestanding sample structure. The spin texture was uncovered using location dependent Hall effect and planar Hall effect measurement. The charge carrier density and anomalous Hall resistance showed a linear behavior along the length of the sample. Similarly, the planar Hall resistance related with the spin dependent scattering was also found to be different at two different location along the length of the sample. The spin-momentum locking also gave rise to transverse thermal spin current and spin-Nernst magneto thermopower response, which was uncovered using angle dependent longitudinal second harmonic measurement. The magneto thermopower response was also a function of crystallography of the Si sample where the sign of the response was opposite for and aligned samples. The spin-momentum locking in topological phonons may give rise to large spin dependent response at and above room temperature, which can pave the way for energy efficient spintronics and spin-caloritronics devices.
ISSN:2331-8422