Local probe of the interlayer coupling strength of few-layers SnSe by contact-resonance atomic force microscopy

• Published in: arXiv.org
• Main Authors: Zheng, Zhiyue, Pan, Yuhao, Pei, Tengfei, Xu, Rui, Xu, Kunqi, Le, Lei, Hussain, Sabir, Liu, Xiaojun, Bao, Lihong, Hong-Jun, Gao, Ji, Wei, Cheng, Zhihai
• Format: Paper
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 09.09.2020
• Subjects: Atomic force microscopy; Bonding strength; Chemical properties; Density functional theory; Heterostructures; Interlayers; Layered materials; Mathematical models; Microscopy; Modulus of elasticity; Nondestructive testing; Optical properties; Resonance; Silicon dioxide; Spectrum analysis; Stiffness; Substrates; Two dimensional materials

The interlayer bonding in two dimensional materials is particularly important because it is not only related to their physical and chemical stability but also affects their mechanical, thermal, electronic, optical, and other properties. To address this issue, we report the direct characterization of the interlayer bonding in 2D SnSe using contact-resonance atomic force microscopy in this study. Site specific CR spectroscopy and CR force spectroscopy measurements are performed on both SnSe and its supporting SiO2 substrate comparatively. Based on the cantilever and contact mechanic models, the contact stiffness and vertical Young's modulus are evaluated in comparison with SiO2 as a reference material. The interlayer bonding of SnSe is further analyzed in combination with the semi-analytical model and density functional theory calculations. The direct characterization of interlayer interactions using this nondestructive methodology of CR AFM would facilitate a better understanding of the physical and chemical properties of 2D layered materials, specifically for interlayer intercalation and vertical heterostructures.