Use of mist chemical vapor deposition to impart ferroelectric properties to e-Ga^sub 2^O^sub 3^ thin films on SnO^sub 2^/c-sapphire substrates
ε-Ga2O3 has a polar crystal structure with non-inversion-symmetry along the direction of the c-axis. In a previous study, the ferroelectric hysteresis loop of ε-Ga2O3 was successfully measured using a planar-plate capacitor comprising a thick ε-Ga2O3 layer (3 μm). Herein, we aim to enhance the ferro...
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Published in | Materials letters Vol. 232; p. 47 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
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Amsterdam
Elsevier BV
01.12.2018
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Abstract | ε-Ga2O3 has a polar crystal structure with non-inversion-symmetry along the direction of the c-axis. In a previous study, the ferroelectric hysteresis loop of ε-Ga2O3 was successfully measured using a planar-plate capacitor comprising a thick ε-Ga2O3 layer (3 μm). Herein, we aim to enhance the ferroelectric properties of ε-Ga2O3 to allow ferroelectric measurements to be conducted with a lower maximum applied voltage and a higher measurement frequency as compared with previous studies. We successfully observed ferroelectric hysteresis loops of orthorhombic ε-Ga2O3 thin (250 nm) films grown on SnO2 conductive layers on c-sapphire substrates. Moreover, the smooth-surface morphology and improved crystal quality induced ferroelectric properties in the ε-Ga2O3 thin films grown at 750 °C. This material was used to facilitate ferroelectric measurements at a relatively high frequency of 1 kHz with a maximum applied electric field of 0.38 MV/cm and a small remnant polarization (2Pr = 7.6 nC/cm2) at room temperature. |
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AbstractList | ε-Ga2O3 has a polar crystal structure with non-inversion-symmetry along the direction of the c-axis. In a previous study, the ferroelectric hysteresis loop of ε-Ga2O3 was successfully measured using a planar-plate capacitor comprising a thick ε-Ga2O3 layer (3 μm). Herein, we aim to enhance the ferroelectric properties of ε-Ga2O3 to allow ferroelectric measurements to be conducted with a lower maximum applied voltage and a higher measurement frequency as compared with previous studies. We successfully observed ferroelectric hysteresis loops of orthorhombic ε-Ga2O3 thin (250 nm) films grown on SnO2 conductive layers on c-sapphire substrates. Moreover, the smooth-surface morphology and improved crystal quality induced ferroelectric properties in the ε-Ga2O3 thin films grown at 750 °C. This material was used to facilitate ferroelectric measurements at a relatively high frequency of 1 kHz with a maximum applied electric field of 0.38 MV/cm and a small remnant polarization (2Pr = 7.6 nC/cm2) at room temperature. |
Author | Noda, Minoru Yoshimoto, Masahiro Nishinaka, Hiroyuki Tahara, Daisuke |
Author_xml | – sequence: 1 givenname: Daisuke surname: Tahara fullname: Tahara, Daisuke – sequence: 2 givenname: Hiroyuki surname: Nishinaka fullname: Nishinaka, Hiroyuki – sequence: 3 givenname: Minoru surname: Noda fullname: Noda, Minoru – sequence: 4 givenname: Masahiro surname: Yoshimoto fullname: Yoshimoto, Masahiro |
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Snippet | ε-Ga2O3 has a polar crystal structure with non-inversion-symmetry along the direction of the c-axis. In a previous study, the ferroelectric hysteresis loop of... |
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SubjectTerms | Chemical vapor deposition Crystal structure Ferroelectric materials Ferroelectricity Ferroelectrics Gallium oxides Hysteresis loops Materials science Measurement Morphology Organic chemistry Plates (structural members) Properties (attributes) Sapphire Substrates Thin films Tin dioxide |
Title | Use of mist chemical vapor deposition to impart ferroelectric properties to e-Ga^sub 2^O^sub 3^ thin films on SnO^sub 2^/c-sapphire substrates |
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