Composition Dependence of the Band Gap Energy of Dilute Bismuth and Nitride GaN x Bi y As1−y−z Alloy (0 ≤ x ≤ 0.05, 0 ≤ y ≤ 0.05)
The band gap evolution of dilute bismuth and nitride GaNxBiyAs1−x−y alloy is analyzed. It is found that the location of the Г conduction band minimum (CBM) of GaNxBiyAs1−x−y is determined by two factors. One is the influence of the Bi content on the Г CBM of GaAs. The other is the interaction and th...
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| Published in | Journal of electronic materials Vol. 47; no. 8; pp. 4539 - 4543 |
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| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
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Springer Nature B.V
01.08.2018
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| Abstract | The band gap evolution of dilute bismuth and nitride GaNxBiyAs1−x−y alloy is analyzed. It is found that the location of the Г conduction band minimum (CBM) of GaNxBiyAs1−x−y is determined by two factors. One is the influence of the Bi content on the Г CBM of GaAs. The other is the interaction and the hybridization between the N level and the Г CBM of GaBiyAs1−y. For the Г valence band maximum (VBM) of GaNxBiyAs1−x−y, the main factor to determine its location is the interaction and the hybridization between the Bi level and the Г VBM of GaAs. According to the physical mechanism for the band gap evolution, a model is established to depict the band gap energy of GaNxBiyAs1−x−y depending on N and Bi contents quantitatively. The results obtained using the model are consistent with the experimental data. |
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| AbstractList | The band gap evolution of dilute bismuth and nitride GaNxBiyAs1−x−y alloy is analyzed. It is found that the location of the Г conduction band minimum (CBM) of GaNxBiyAs1−x−y is determined by two factors. One is the influence of the Bi content on the Г CBM of GaAs. The other is the interaction and the hybridization between the N level and the Г CBM of GaBiyAs1−y. For the Г valence band maximum (VBM) of GaNxBiyAs1−x−y, the main factor to determine its location is the interaction and the hybridization between the Bi level and the Г VBM of GaAs. According to the physical mechanism for the band gap evolution, a model is established to depict the band gap energy of GaNxBiyAs1−x−y depending on N and Bi contents quantitatively. The results obtained using the model are consistent with the experimental data. |
| Author | Tong, Wei Chuan-Zhen Zhao He-Yu, Ren Sha-Sha, Wang Ke-Qing Lu |
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| DOI | 10.1007/s11664-018-6317-3 |
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| Snippet | The band gap evolution of dilute bismuth and nitride GaNxBiyAs1−x−y alloy is analyzed. It is found that the location of the Г conduction band minimum (CBM) of... |
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| SubjectTerms | Band gap Bismuth Conduction bands Dilution Energy gap Evolution Gallium arsenide Gallium nitrides Valence band |
| Title | Composition Dependence of the Band Gap Energy of Dilute Bismuth and Nitride GaN x Bi y As1−y−z Alloy (0 ≤ x ≤ 0.05, 0 ≤ y ≤ 0.05) |
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