Impact of metal electrode work function of CH^sub 3^NH^sub 3^PbI^sub 3^/p-Si planar heterojunction perovskite solar cells
The use of p-type silicon (p-Si) as hole transport materials (HTM) has been suggested to enhance the stability of perovskite-based solar cell (PSC). We design and simulate the CH3NH3PbI3/p-Si planar heterojunction perovskite solar cell and the power conversion efficiency exceeding 18%. In the solar...
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Published in | Solar energy Vol. 158; p. 424 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
Pergamon Press Inc
01.12.2017
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Subjects | |
Online Access | Get full text |
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Summary: | The use of p-type silicon (p-Si) as hole transport materials (HTM) has been suggested to enhance the stability of perovskite-based solar cell (PSC). We design and simulate the CH3NH3PbI3/p-Si planar heterojunction perovskite solar cell and the power conversion efficiency exceeding 18%. In the solar cell, the metal electrode work function of perovskite solar cells is a decisive factor for built-in voltage (Vbi). The device simulation revealed that the Vbi and VOC increases when rear electrode work function (...M-rear) decreasing from -4.3 eV to -4.7 eV, the Vbi almost saturate to the plateau and the performance is optimal when ...M-rear = -4.8 to -5.2 eV. However, the work function of the front electrode (...M-front) also has a significant effect on the performance of p-Si perovskite solar cell. When ...M-front decreasing from -3.4 to -4.0 eV, a higher performance can be obtained and the Vbi almost saturate to the plateau. The results showed the importance of the ...M matching to maintain Vbi, which is useful guideline for the design of the p-Si perovskite solar cell.(ProQuest: ... denotes formulae/symbols omitted.) |
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ISSN: | 0038-092X 1471-1257 |