Exploring metalorganic chemical vapor deposition of Si-alloyed Al^sub 2^O^sub 3^ dielectrics using disilane

• Published in: Journal of crystal growth Vol. 464; p. 54
• Main Authors: Chan, Silvia H, Keller, Stacia, Koksaldi, Onur S, Gupta, Chirag, Denbaars, Steven P, Mishra, Umesh K
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier BV 15.04.2017
• Subjects: Aluminum base alloys; Aluminum oxide; Chemical vapor deposition; Control stability; Dielectric properties; Film growth; Metalorganic chemical vapor deposition; MOS devices; Oxygen; Reaction kinetics; Refractivity; Silicon dioxide; Stacks; Temperature; Temperature dependence

The alloying of Al2O3 films with Si is a promising route to improve gate dielectric properties in Si- and wide-bandgap- based MOS devices. Here we present a comprehensive investigation of alloyed film growth by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum, disilane, and oxy...