Exploring metalorganic chemical vapor deposition of Si-alloyed Al^sub 2^O^sub 3^ dielectrics using disilane

The alloying of Al2O3 films with Si is a promising route to improve gate dielectric properties in Si- and wide-bandgap- based MOS devices. Here we present a comprehensive investigation of alloyed film growth by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum, disilane, and oxy...

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Bibliographic Details
Published inJournal of crystal growth Vol. 464; p. 54
Main Authors Chan, Silvia H, Keller, Stacia, Koksaldi, Onur S, Gupta, Chirag, Denbaars, Steven P, Mishra, Umesh K
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier BV 15.04.2017
Subjects
Aluminum base alloys
Aluminum oxide
Chemical vapor deposition
Control stability
Dielectric properties
Film growth
Metalorganic chemical vapor deposition
MOS devices
Oxygen
Reaction kinetics
Refractivity
Silicon dioxide
Stacks
Temperature
Temperature dependence
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Summary:The alloying of Al2O3 films with Si is a promising route to improve gate dielectric properties in Si- and wide-bandgap- based MOS devices. Here we present a comprehensive investigation of alloyed film growth by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum, disilane, and oxygen precursors over a variety of temperature and flow conditions. Binary growth rates of Al2O3 and SiO2 were evaluated to explain the aggregate growth kinetics of Si-alloyed Al2O3 films, and refractive indices were used to monitor Si incorporation efficiencies. The temperature dependence of the reaction rate of disilane with oxygen was found to be similar to that of trimethylaluminum and oxygen, leading to well-behaved deposition behavior in the kinetic and mass-transport controlled growth regimes. Compositional predictability and stability was achieved over a wider growth space with disilane-based growths as compared to previous work, which used silane as the Si precursor instead. In situ (Al,Si)O/n-GaN MOS gate stacks were grown and showed increasing reduction of net positive fixed charges with higher Si composition.
ISSN:0022-0248
1873-5002