Mechanism of Carrier Transport in n-Type [beta]-FeSi2/Intrinsic Si/p-Type Si Heterojunctions

• Published in: Advanced materials research Vol. 1119; p. 189
• Main Authors: Promros, Nathaporn, Takahara, Motoki, Baba, Ryuji, Mostafa, Tarek M, Shaban, Mahmoud, Yoshitake, Tsuyoshi
• Format: Journal Article
• Language: English
• Published: Zurich Trans Tech Publications Ltd 01.07.2015

Preparation of n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions was accomplished by facing-target direct-current sputtering (FTDCS) and measuring their current-voltage characteristic curves at low temperatures ranging from 300 K down to 50 K. A mechanism of carrier transport in the fabricated h...