Implementation of High-Power-Density [Formula Omitted]-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

• Published in: IEEE electron device letters Vol. 36; no. 10; p. 1004
• Main Authors: Fitch, Robert C, Walker, Dennis E, Green, Andrew J, Tetlak, Stephen E, Gillespie, James K, Gilbert, Ryan D, Sutherlin, Karynn A, Gouty, William D, Theimer, James P, Via, Glen D, Chabak, Kelson D, Jessen, Gregg H
• Format: Journal Article
• Language: English
• Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.10.2015
• Subjects: Electronics industry; Nanotechnology

A GaN high electron mobility transistor monolithic microwave integrated circuit (MMIC) designer typically has to choose a device design either for high-gain millimeter-wave operation with a short gate length, or for high-power-density [Formula Omitted]-band operation with a much larger gate/field-pl...