Gettering properties of PrO2 in In0.5.Ga0.47As LPE growth

• Published in: Journal of crystal growth Vol. 110; no. 4; pp. 862 - 866
• Main Authors: NOVAK, J, HASENOHRL, S, KULIFFAYOVA, M, OSWALD, J
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 1991
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Crystal growth; Epitaxy; Indium Gallium Arsenides Mixed; Experimental study; Inorganic compound; Thin film; Growth from liquid