Quantum size effects on photoluminescence from Si nanocrystals in PECVD silicon-rich-oxide

• Published in: Applied surface science Vol. 113114; pp. 116 - 120
• Main Authors: YANG, C.-S, LIN, C.-J, KUEI, P.-Y, HORNG, S.-F, CHING-HSIANG HSU, C, LIAW, M.-C
• Format: Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier Science 1997
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Elemental semiconductors; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Red shift; Annealing; Tunnel effect; Photoluminescence; Silicon; Experimental study; Nanocrystal; Quantum size effect