Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas Groups in Nitrides, SiC and ZnO

• Published in: Journal of electronic materials Vol. 37; no. 5; pp. 672 - 680
• Main Authors: SPEER, Kevin M, NEUDECK, Philip G, SPRY, David J, TRUNEK, Andrew J, PIROUZ, Pirouz
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 2008
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Diodes; Electroluminescence; Electronics; Exact sciences and technology; Materials; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other luminescence and radiative recombination; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Stacking faults; High density; Line defects; Electroluminescence; Etching; Potassium hydroxides; Junction diodes; Extended defects; Thin films; stacking fault; Silicon carbide; Transmission electron microscopy; defect-preferential etching; Etch pits; p n junctions; double positioning boundary; Heteroepitaxy; Formation mechanism; 3C-SiC; Defect formation; Melts