A low complexity 0.13 μm SiGe BiCMOS technology for wireless and mixed signal applications
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| Main Authors | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
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| Format | Conference Proceeding |
| Language | English |
| Published |
Piscataway NJ
IEEE
2004
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| Subjects | |
| Online Access | Get full text |
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| Author | OMER, B COOLBAUGH, D ONGE, S. St DUNN, J SLINKMAN, J LINDGREN, P SHERIDAN, D HIGGINS, J GAUTSCH, M GRAY, P FEILCHENFELD, N VAED, K RASSEL, R LANZEROTTI, L LABELLE, B RASCOE, J MURTY, R LARSEN, T HE, J JOSEPH, A DOWNES, K BOLAM, R GRECO, J WATSON, K STAMPER, T STEIN, K HODGE, W ESHUN, E GORDON, M SWEENEY, S |
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| Keywords | Passive component Performance evaluation BiCMOS technology Field effect transistor Semiconductor alloys State of the art Complementary MOS technology Integrated circuit System on a chip Optimization |
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| SubjectTerms | Applied sciences Design. Technologies. Operation analysis. Testing Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| Title | A low complexity 0.13 μm SiGe BiCMOS technology for wireless and mixed signal applications |
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