Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy Special issue on SiC and the group III nitride semiconductors

Saved in:
Bibliographic Details
Published inJournal of electronic materials Vol. 34; no. 4; pp. 357 - 360
Main Authors HASKELL, Benjamin A, CHAKRABORTY, Arpan, FENG WU, SASANO, Hideo, FINI, Paul T, DENBAARS, Steven P, SPECK, James S, NAKAMURA, Shuji
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 2005
Subjects
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Defects and impurities in crystals; microstructure
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Stacking faults and other planar or extended defects
Structure of solids and liquids; crystallography
Vapor phase epitaxy; growth from vapor phase
Atomic force microscopy
transmission electron microscopy (TEM)
Inorganic compounds
Gallium nitrides
Thick films
Roughness
Binary compounds
VPE
Hydrides
surface morphology
Crystal growth from vapors
Experimental study
Dislocations
Faceting
Voids
Nonpolar
GaN
Morphology
hydride vapor phase epitaxy (HVPE)
Heteroepitaxy
Microstructure
IV characteristic
III-V semiconductors
Online AccessGet full text

Cover

More Information
ISSN:0361-5235
1543-186X