Raman scattering study of vacancy-hydrogen related defects in silicon

Saved in:
Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 308-10; pp. 206 - 209
Main Authors LAVROV, E. V, WEBER, J, HUANG, L, NIELSEN, B. Bech
Format Conference Proceeding
LanguageRussian
Published Amsterdam Elsevier 2001
Online AccessGet full text

Cover

Author WEBER, J
HUANG, L
LAVROV, E. V
NIELSEN, B. Bech
Author_xml – sequence: 1
  givenname: E. V
  surname: LAVROV
  fullname: LAVROV, E. V
  organization: University of Technology, 01062 Dresden, Germany
– sequence: 2
  givenname: J
  surname: WEBER
  fullname: WEBER, J
  organization: University of Technology, 01062 Dresden, Germany
– sequence: 3
  givenname: L
  surname: HUANG
  fullname: HUANG, L
  organization: Duke University, Durham, NC 27708, United States
– sequence: 4
  givenname: B. Bech
  surname: NIELSEN
  fullname: NIELSEN, B. Bech
  organization: University of Århus, 8000, Århus, Denmark
BackLink http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=13423452$$DView record in Pascal Francis
BookMark eNqNjr0KwjAYRYNUsFXfIYtjoElaq7NUnMW9fOSnRtK0JFHI25vBB_Aud7nncCtUuNmpFSrpqeOEUd4WqKzPjJKmZccNqkJ41Tm0oyXq7zCBw0FAjMobN-IQ3zLhWeMPCHAikWeSfh6Vw15ZiEpiqbQSMWCTOWONmN0OrTXYoPa_3qLDtX9cbmSBbLbaZ5EJw-LNBD4NlDeM5zP8390XDwRANA
ContentType Conference Proceeding
Copyright 2002 INIST-CNRS
Copyright_xml – notice: 2002 INIST-CNRS
DBID IQODW
DatabaseName Pascal-Francis
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Physics
EISSN 1873-2135
EndPage 209
ExternalDocumentID 13423452
GroupedDBID --K
--M
-~X
.~1
08R
0R~
123
1B1
1RT
1~.
1~5
29O
4.4
457
4G.
5VS
6TJ
7-5
71M
8P~
9JN
AABNK
AACTN
AAEDT
AAEDW
AAEPC
AAIAV
AAIKJ
AAKOC
AALRI
AAOAW
AAQFI
AAQXK
AAXUO
ABFNM
ABMAC
ABNEU
ABPIF
ABPTK
ABXDB
ABXRA
ABYKQ
ACDAQ
ACFVG
ACGFS
ACNCT
ACNNM
ACRLP
ADBBV
ADEZE
ADIYS
ADMUD
AEBSH
AEKER
AFFNX
AFKWA
AFTJW
AGHFR
AGUBO
AGYEJ
AHHHB
AIEXJ
AIKHN
AITUG
AIVDX
AJBFU
AJOXV
ALMA_UNASSIGNED_HOLDINGS
AMFUW
AMRAJ
ASPBG
AVWKF
AXJTR
AZFZN
BBWZM
BKOJK
BLXMC
CS3
EBS
EFJIC
EJD
EO8
EO9
EP2
EP3
FDB
FEDTE
FGOYB
FIRID
FNPLU
FYGXN
G-Q
GBLVA
HMV
HZ~
H~9
IHE
IQODW
J1W
K-O
KOM
M38
M41
MAGPM
MO0
MVM
N9A
NDZJH
O-L
O9-
OAUVE
OGIMB
OZT
P-8
P-9
P2P
PC.
Q38
R2-
RIG
RNS
ROL
RPZ
SDF
SDG
SDP
SES
SEW
SPC
SPCBC
SPD
SPG
SSQ
SSZ
T5K
TN5
VOH
WUQ
XJT
XOL
XPP
YNT
ZMT
~02
~G-
ID FETCH-pascalfrancis_primary_134234523
ISSN 0921-4526
IngestDate Sun Oct 22 16:09:16 EDT 2023
IsPeerReviewed true
IsScholarly true
Language Russian
License CC BY 4.0
LinkModel OpenURL
MeetingName Proceedings of the 21st international conference on defects in semiconductors, ICDS-21, Giessen, Germany, 16-20 July 2001
MergedId FETCHMERGED-pascalfrancis_primary_134234523
ParticipantIDs pascalfrancis_primary_13423452
PublicationCentury 2000
PublicationDate 2001
PublicationDateYYYYMMDD 2001-01-01
PublicationDate_xml – year: 2001
  text: 2001
PublicationDecade 2000
PublicationPlace Amsterdam
PublicationPlace_xml – name: Amsterdam
PublicationTitle Physica. B, Condensed matter
PublicationYear 2001
Publisher Elsevier
Publisher_xml – name: Elsevier
SSID ssj0000171
Score 2.9907343
SourceID pascalfrancis
SourceType Index Database
StartPage 206
Title Raman scattering study of vacancy-hydrogen related defects in silicon
Volume 308-10
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3PT8IwGG0QY6InRYw_SQ96Mlu2lcF2EwwGTURiALmRrVsDCTIDw0QP_u1-bbduItHoZSFj67o-8n3t432vCJ3XAsooMQKNQOyHBUrd03wjNDTmQDplpkMJ44XC951au1-9G9rDQuEqX10S-zp9X1tX8h9U4Rzgyqtk_4CsahROwGfAF46AMBy_Y7w21XTlMOuXTcF4Rnw_2wXMIZ-9WOluE_dtj7P1Cyq-kCRCYif96lEeYrXxWzCP4FmyvgUaCUKp9ZjAfZMp_GQy-U5j8PgwEHFUz2SyT62m1FUo7rndb8iaKEUxd245vyW0BU3odZgQaSnvYK7wDmlBTJ5RtGA5aluJs7WMp06daJYpHUnSgEuEo2w-ahq1XAK2DDdLTukf8is5SykJTe5gCA_dQJt8k3cu6tQ_zJyBmFhyq65x6asHQz1lctuS3Fyit4vKWZUl7ipQ91BhviyhnZxBZAltSXwX-6gl8MMZfljghyOGV_HDCX44wQ9P4D6JXxld3LR6123tS_dGL9JyZJS-JjlAxVk0Cw8RJrRq2wFhtsM3MXarbiimhwHzIfe5zDlClZ_bOv7tghO0nQF_iorxfBmewRQs9itilD8Brug4wQ
link.rule.ids 310,311,783,787,792,793,4059,4060,23944,23945,25154
linkProvider Elsevier
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=proceeding&rft.title=Physica.+B%2C+Condensed+matter&rft.atitle=Raman+scattering+study+of+vacancy-hydrogen+related+defects+in+silicon&rft.au=LAVROV%2C+E.+V&rft.au=WEBER%2C+J&rft.au=HUANG%2C+L&rft.au=NIELSEN%2C+B.+Bech&rft.date=2001-01-01&rft.pub=Elsevier&rft.issn=0921-4526&rft.eissn=1873-2135&rft.volume=308-10&rft.spage=206&rft.epage=209&rft.externalDBID=n%2Fa&rft.externalDocID=13423452
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0921-4526&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0921-4526&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0921-4526&client=summon