Raman scattering study of vacancy-hydrogen related defects in silicon

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Published inPhysica. B, Condensed matter Vol. 308-10; pp. 206 - 209
Main Authors LAVROV, E. V, WEBER, J, HUANG, L, NIELSEN, B. Bech
Format Conference Proceeding
LanguageRussian
Published Amsterdam Elsevier 2001
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Author WEBER, J
HUANG, L
LAVROV, E. V
NIELSEN, B. Bech
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  organization: University of Technology, 01062 Dresden, Germany
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  organization: Duke University, Durham, NC 27708, United States
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  givenname: B. Bech
  surname: NIELSEN
  fullname: NIELSEN, B. Bech
  organization: University of Århus, 8000, Århus, Denmark
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Title Raman scattering study of vacancy-hydrogen related defects in silicon
Volume 308-10
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