Complex conductivity of UTX compounds in high magnetic fields

We have performed Resonance Frequency (RF) skin depth (complex-conductivity) and magnetoresistance measurements of antiferromagnetic UTX compounds (T Ni, and X := AI, Ga, Ge) in applied magnetic fields up to 60 T applied parallel to the easy directions. The RF penetration depth was measured by coupl...

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Bibliographic Details
Published inJournal of applied physics
Main Authors Lacerda, Alex Hugo, Mielke, Charles H, Mc Donald, Ross D
Format Journal Article
LanguageEnglish
Published United States 01.01.2008
Subjects
ANTIFERROMAGNETIC MATERIALS
MAGNETIC FIELDS
MAGNETORESISTANCE
MATERIALS SCIENCE
PENETRATION DEPTH
RESONANCE
TANK CIRCUITS
URANIUM COMPOUNDS
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Summary:We have performed Resonance Frequency (RF) skin depth (complex-conductivity) and magnetoresistance measurements of antiferromagnetic UTX compounds (T Ni, and X := AI, Ga, Ge) in applied magnetic fields up to 60 T applied parallel to the easy directions. The RF penetration depth was measured by coupling the sample to the inductive element of a resonant tank circuit and then, measuring the shifts in the resonant frequency {Delta}f of the circuit. Shifts in the resonant frequency {Delta}f are known to be proportional to the skin depth of the sample and we find a direct correspondence between the features in {Delta}f and magnetoresistance. Several first-order metamagnetic transitions, which are accompanied by a drastic change in {Delta}f, were observed in these compounds. In general, the complex-conductivity results are consistent with magnetoresistance data.
Bibliography:AC52-06NA25396
LA-UR-08-06297; LA-UR-08-6297
USDOE
ISSN:0021-8979
1089-7550