Effects of He (90%)/H{sub 2} (10%) plasma treatment on electric properties of low dielectric constant SiCOH films

• Published in: Materials research bulletin Vol. 47; no. 10
• Main Authors: Kim, Hoonbae, Ha, Myung Hoon, Jung, Donggeun, Chae, Heeyeop, Kim, Hyoungsub
• Format: Journal Article
• Language: English
• Published: United States 15.10.2012
• Subjects: DEPOSITION; ELECTRIC POTENTIAL; LEAKAGE CURRENT; MATERIALS SCIENCE; MICROELECTRONICS; PEAKS; PERMITTIVITY; PLASMA; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY

In microelectronics industry, integration of the low dielectric constant (low-k) material films is a continuing issue due to the decreasing device feature size. To improve electric properties, various post-deposition treatments of the low-k material films can be used. In this work, we used room temp...