Introduction of Si/SiO{sub 2} interface states by annealing Ge-implanted films

• Published in: Journal of applied physics Vol. 96; no. 8
• Main Authors: Marstein, E.S., Gunnaes, A.E., Olsen, A., Finstad, T.G., Turan, R., Serincan, U., Department of Physics, Middle East Technical University, 06531 Ankara
• Format: Journal Article
• Language: English
• Published: United States 15.10.2004
• Subjects: ANNEALING; CAPACITANCE; CAPACITORS; ELECTRONIC EQUIPMENT; ELECTRONIC STRUCTURE; FABRICATION; GERMANIUM IONS; INTERFACES; ION IMPLANTATION; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; MATERIALS SCIENCE; NANOSTRUCTURES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VACUUM COATING; X RADIATION

Nanocrystals embedded in SiO{sub 2} films are the subject of a number of recent works, mainly because of their potential usefulness in the fabrication of optoelectronic devices and nanocrystal memory structures. One interesting method for the fabrication of such nanocrystals is the ion implantation...